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Infineon Technologies AG |
A 35 dB Gain-Sloped LNB I.F. Amplifier • • • • • • Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications • For high gain low noise amplifiers • Ideal for wideband |
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Infineon Technologies AG |
Active Biased RF Transistor • • • • • • Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications • For high gain low noise amplifiers • Ideal for wideband |
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Infineon Technologies AG |
Active Biased Transistor • For high gain low noise amplifiers • Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators • Gma=17.5dB at 1.8GHz • Small SOT343 package • Current easy adjustable by an external resistor • |
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Infineon Technologies AG |
BGB540 as a 1.85 GHz Low Noise Amplifier )XQFWLRQ Input matching, DC block RF bypass Output matching, DC block RF bypass Input matching Output matching, RF choke Jumper Supply current adjustment Jumper Stabilization BGB540 SOT343 Infineon Technologies Active biased transistor 0HDVXUHG &L |
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