BGB540 |
Part Number | BGB540 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
• • • • • • Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications • For high gain low noise amplifiers • Ideal for wideband applications, cellular phones, cordless telephones, SAT-TV and high frequency oscillators Bias,4 Bias C,3 Description SIEGET®-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias . B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling... |
Document |
BGB540 Data Sheet
PDF 129.68KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BGB540 |
Infineon Technologies AG |
Active Biased RF Transistor | |
2 | BGB540LNA |
Infineon Technologies AG |
BGB540 as a 1.85 GHz Low Noise Amplifier | |
3 | BGB100 |
NXP |
0 dBm TrueBlue radio module | |
4 | BGB101 |
NXP |
0 dBm Bluetooth radio module | |
5 | BGB110 |
NXP |
Bluetooth radio module |