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Infineon Technologies |
SPD08P06P · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · www.DataSheet4U.com A |
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Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P |
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Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) |
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Infineon Technologies |
Power-Transistor • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID |
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Infineon Technologies |
Cool MOS Power Transistor · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · A Type SPP08P06P SPB08 |
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Infineon Technologies |
SIPMOS Power-Transistor · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · www.DataSheet4U.com A |
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Infineon Technologies |
Small-Signal-Transistor • Dual P-channel • Enhancement mode • Logic level (4.5V rated) • ESD protected • Qualified according to AEC Q101 • 100% Lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL308PE Product Summary VDS RDS(on),max ID VGS=-10 V VGS= |
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Infineon Technologies |
Power-Transistor Product Summary · P-Channel · Enhancement mode · Avalanche rated · dv/dt rated Drain source voltage VDS -60 V Drain-source on-state resistance RDS(on) 0.3 W Continuous drain current ID -8.8 A · 175°C operating temperature • Pb-free lead plat |
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Infineon Technologies |
Power-Transistor • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID |
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Infineon Technologies AG |
NPN/PNP Silicon Digital Transistor Array 40 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCR08PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = |
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Infineon Technologies |
SIPMOS Power-Transistor · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · A Type SPD08P06P SPU08 |
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