| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity P-TO251 Product Summary VDS RDS(on) ID 600 0.95 4.5 P-TO252 V Ω A Typ |
|
|
|
|
Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU04N60S5 SPD04N60S5 VDS RDS(on) ID PG-TO252 600 V 0.95 Ω 4.5 A PG |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU02N60S5 SPD02N60S5 VDS RDS(on) ID PG-TO252 600 V 3 Ω 1.8 A P |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 and TO-252 • Ultra low gate charge www.DataSheet4U.com Product Summary VDS RDS(on) ID P-TO251 600 0.6 7.3 P-TO252 V Ω A • Periodic avalanche rated • Extreme dv/dt rat |
|
|
|
|
Infineon |
Power Transistor Ptot 7 M7 VWJ dv/dt 9DOXH ± 15 8QLW $ P- $ 9 : & V/ns a) non-Halogen free (OPN: SPD04N60C3BT), Halogen free (OPN: SPD04N60C3AT) Rev. 2.6 PDJH 2005-10 63'1& 6381& 0D[LPXP5DWLQ |
|
|
|
|
Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 650 6 0.8 V Ω A P-TO251-3-1 Type SPU01N60C3 SPD01N60C3 Package P- |
|
|
|
|
Infineon Technologies |
Cool MOS Power Transistor B -(, , 3(0 +** *(, -(, k,* &-* -2 '//((( %+/* "# |
|
|
|
|
Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU03N60S5 SPD03N60S5 VDS RDS(on) ID PG-TO252 600 V 1.4 Ω 3.2 A PG- |
|
|
|
|
Infineon Technologies |
Cool MOS Power Transistor . 2.6 PDJH 1705-15 63'1& 6381& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQW |
|
|
|
|
Infineon Technologies |
Power Transistor & I!+] VGS 3RZHUGLVVLSDWLRQ7& & 2SHUDWLQJDQGVWRUDJHWHPSHUDWXUH Ptot 7 M7 VWJ 9DOXH 15 ± 8QLW $ P- $ 9QV 9 : & a) Except PG-TO251, non-Halogen free (OPN: SPD07N60C3BT), Halogen |
|
|
|
|
Infineon Technologies |
SIPMOS Power-Transistor · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature VDS RDS(on) ID -60 0.3 -8.8 V W · · · · www.DataSheet4U.com A |
|
|
|
|
Infineon Technologies |
SIPMOS Power Transistor • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 28 V A Enhancement mode RDS(on) 0.023 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type SPD28N03 SPU28N0 |
|
|
|
|
Infineon Technologies |
SIPMOS Power Transistor • N channel • SPD 30N03 30 30 V A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID Enhancement mode RDS(on) 0.015 Ω • Avalanche rated • dv/dt rated • 175˚C operating temperature Type SPD30N0 |
|
|
|
|
Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 30 8.2 30 P- TO251 -3-1 V mΩ A • Enhancement mode • Low On-Resistance RDS(on) www.DataSheet4U.com • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating tempera |
|
|
|
|
Infineon Technologies |
OptiMOS Power-Transistor Product Summary VDS RDS(on) ID 30 10 30 P-TO251 N-Channel Logic Level Low on-resistance RDS(on) www.DataSheet4U.com Excellent Gate Charge x RDS(on) product (FOM) 175°C operating temperature Avalanche rated dv/dt rated Ideal for fast |
|
|
|
|
Infineon Technologies |
SIPMOS Power Transistor • N channel • SPD 07N20 VDS RDS(on) ID 200 0.4 7 V Ω A Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current Enhancement mode rated • Avalanche rated • dv/dt www.DataSheet4U.com Type SPD07N20 SPU07N20 Pa |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPU07N60S5 SPD07N60S5 |
|
|
|
|
Infineon Technologies |
SIPMOS-R POWER TRANSISTOR • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 8.4 V Ω A Enhancement mode Level • Avalanche rated www.DataSheet4U.com • Logic • dv/dt rated • 175˚C operating t |
|
|
|
|
Infineon Technologies |
SIPMOS Power Transistor • N channel • SPD 08N10 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 100 0.3 8.4 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt Type SPD08N10 SPU08N1 |
|
|
|
|
Infineon Technologies |
SIPMOS PowerTransistor • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.1 9.2 V Ω A Enhancement mode rated • Avalanche rated www.DataSheet4U.com • dv/dt • 175˚C operating temperature Ty |
|