SPU02N60S5 |
Part Number | SPU02N60S5 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved tr... |
Features |
Page 1
2008-04-07
SPU02N60S5 SPD02N60S5
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 1.8 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol
RthJC RthJA RthJA
Tsold
Values
Unit
min. typ. max.
-
-
5 K/W
-
-
75
-
-
75
-
-
50
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specifi... |
Document |
SPU02N60S5 Data Sheet
PDF 882.81KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SPU02N60S5 |
INCHANGE |
N-Channel MOSFET | |
2 | SPU02N60 |
Siemens Semiconductor |
SIPMO Power Transistor | |
3 | SPU02N60C3 |
Infineon Technologies |
Cool MOS Power Transistor | |
4 | SPU02N60C3 |
INCHANGE |
N-Channel MOSFET | |
5 | SPU01N60C3 |
Infineon |
Cool MOS Power Transistor |