| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPB100N04S2-04 IPP100N04S2-04 Product Summary V DS R |
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Infineon Technologies |
SPN02N60S5 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4U.com • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 1 3 VPS05163 Type SPN02N60 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4U.com • Ultra V Ω A low effective capacitances 3 2 1 VPS05163 Type SPN02N60C3 Package SOT223 Ordering Code Q67040-S4553 Marking 02N60C3 Ma |
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Infineon |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 P |
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Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 Product Summary VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity |
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Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V Ω A • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 3 2 1 VPS051 |
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Infineon |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance V Ω A 3 2 1 VPS05163 Type Package Ordering Code Marking SPN01N60C3 SOT-223 Q67040-S4208 |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances V Ω A 3 2 1 VPS05163 Type Package Ordering Code SPN03N60C3 SOT-223 Q67040S4552 Marking 03N60C3 Maximum Ratings Para |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance 2 1 VPS05163 VDS RDS(on) ID 600 1.4 0.7 SOT-223 4 V Ω A 3 Type SPN03N60S5 Package SOT-223 |
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Infineon Technologies |
Cool MOS Power-Transistor ermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) RthJS RthJA 110 35 Symbol min. SPN01N60S5 Values typ. max. 72 Unit K/W K/W Static Characteristics , at Tj = 25 °C, unless otherwise |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4U.com • Ultra VDS RDS(on) ID 600 3 0.4 SOT-223 4 V Ω A low effective capacitances • Improved transconductance 2 1 3 VPS05163 Type SPN02N60 |
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