| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
MOSFET |
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Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classIPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliabilit |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summar |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C ope |
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Infineon |
Power-Transistor 1 ,. ( 9 V + G?E87 7D4 J " .) \A " 4 F8 EBGD68 HB?F4 : 8 ) >J s+) |
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Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classIPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliabilit |
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Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classIPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliabilit |
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Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classIPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliabilit |
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Infineon Technologies |
IPU05N03LAG • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) www.DataSheet4U.com Product Summary V DS R DS(on),max (SMD version) ID 25 5 |
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Infineon |
MOSFET •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Qualified according to JEDEC Standard •Pb-freeleadplating;RoHScompliant; halogenfreemoldcompound DPAK tab 2 1 3 |
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Infineon Technologies |
Power Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summar |
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Infineon Technologies |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
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Infineon Technologies |
MOSFET •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWM |
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Infineon |
Power-Transistor 1 ,. ( 9 V + G?E87 7D4 J " .) \A " 4 F8 EBGD68 HB?F4 : 8 ) >J s+) |
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Infineon |
MOSFET •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.JEDECforIndustrialApp |
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Infineon |
Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead |
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Infineon |
MOSFET •Highvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •Lowgatecharge •Loweffectivecapacitances •Qualified according to JEDEC Standard •Pb-freeleadplating;RoHScompliant;halogenfreemoldcompound DPAK tab 2 1 3 |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature Product Summa |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
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Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 6.8 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche |
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