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IPU64CN10NG |
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| Part Number | IPU64CN10NG |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPD64CN10N G IPU64CN10N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperatu... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID 100 64 17 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G Package Marking PG-TO252-3 64CN10N PG-TO251-3 64CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain curre... |
| Document |
 IPU64CN10NG Data Sheet
PDF 405.36KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPU60R1K0CE |
Infineon Technologies |
MOSFET |
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| 2 | IPU60R1K0CE |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPU60R1K4C6 |
Infineon Technologies |
MOSFET |
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| 4 | IPU60R1K4C6 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPU60R1K5CE |
Infineon Technologies |
MOSFET |
|