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MOSFET er Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on |
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MOSFET arameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.5 mW 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Produ |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Sum |
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Infineon |
MOSFET urce breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD Min. 30 1 - Values Typ. Max. -- 2. |
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Infineon |
MOSFET 0-3-1 (see ref. product) Final Data Sheet 2 Rev.2.6,2015-09-02 OptiMOS™3PowerMOSTransistorChip IPC300N15N3R 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source bre |
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MOSFET Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VG |
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Infineon |
MOSFET rameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS R |
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Infineon |
MOSFET arameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS |
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Infineon |
MOSFET unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Prod |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.1 m 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green P |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Ava |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Produ |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 2.8 mW 100 A PG-TDSON-8-33 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature • Green |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Sum |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Su |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Sum |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Su |
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Infineon |
Power-Transistor • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Su |
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