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Infineon |
IGBT-Module 25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 1800V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransferc |
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Infineon |
IGBT • LowSwitchingLosses • UnbeatableRobustness • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • 4kVAC1minInsulation • PackagewithCTI>400 • HighCreepageandClearanceDistances • HighPowerDensity • Isolated |
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Infineon |
IGBT = 15 V IC = 800 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 32,0 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 600V InternerGatewiderstand Internalgateresistor Tvj |
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Infineon |
IGBT • Electrical features - VCES = 4500 V - IC nom = 800 A / ICRM = 1600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - |
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Infineon |
IHM-B module • Electrical features - VCES = 3300 V - IC nom = 825 A / ICRM = 1650 A - Low Qg and Cres - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - Trench IGBT 4 - Unbeatable robustness - VCE,sat with |
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