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Infineon BGB DataSheet

No. Partie # Fabricant Description Fiche Technique
1
CYT3DLABGBQ1AESGS

Infineon
T2G 32-bit Automotive MCU

• Graphics subsystem - Supports 2D and 2.5D (perspective warping, 3D effects) graphics rendering - Internal color resolution
• 40-bit for RGBA (4 × 10-bit)
• 24-bit for RGB (3 × 8-bit) - 2048 KB of embedded video RAM memory (VRAM) - Two video output
Datasheet
2
BGB540

Infineon Technologies AG
A 35 dB Gain-Sloped LNB I.F. Amplifier






• Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications
• For high gain low noise amplifiers
• Ideal for wideband
Datasheet
3
CYT3DLBBGBQ1BZSGS

Infineon
T2G 32-bit Automotive MCU

• Graphics subsystem - Supports 2D and 2.5D (perspective warping, 3D effects) graphics rendering - Internal color resolution
• 40-bit for RGBA (4 × 10-bit)
• 24-bit for RGB (3 × 8-bit) - 2048 KB of embedded video RAM memory (VRAM) - Two video output
Datasheet
4
BGB540

Infineon Technologies AG
Active Biased RF Transistor






• Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications
• For high gain low noise amplifiers
• Ideal for wideband
Datasheet
5
BGB420

Infineon Technologies AG
Active Biased Transistor

• For high gain low noise amplifiers
• Ideal for wideband applications, cellular telephones, cordless telephones, SAT-TV and high frequency oscillators
• Gma=17.5dB at 1.8GHz
• Small SOT343 package
• Current easy adjustable by an external resistor
Datasheet
6
BGB707L7ESD

Infineon
Wideband MMIC LNA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet
7
BGB719N7ESD

Infineon
Low Noise Amplifier MMIC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet
8
BGB540LNA

Infineon Technologies AG
BGB540 as a 1.85 GHz Low Noise Amplifier
)XQFWLRQ Input matching, DC block RF bypass Output matching, DC block RF bypass Input matching Output matching, RF choke Jumper Supply current adjustment Jumper Stabilization BGB540 SOT343 Infineon Technologies Active biased transistor 0HDVXUHG &L
Datasheet
9
BGB717L7ESD

Infineon
Low Noise Amplifier MMIC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet
10
BGB741L7ESD

Infineon
Robust Low Noise Broadband RF Amplifier MMIC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Datasheet



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