No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Silicon AF Transistors |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon |
PNP Silicon AF Transistors |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon |
PNP Transistor |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon |
PNP Transistor S ≤ 215 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA A mA mW °C Unit K/W 2 2011-09-15 BCW67, BCW68 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter S |
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Infineon Technologies AG |
NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co |
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Infineon Technologies AG |
NPN Silicon AF Transistor at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Co |
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