BCW60 |
Part Number | BCW60 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | BCW60, BCX70 NPN Silicon AF Transistors For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementa... |
Features |
l Resistance Junction - soldering point 1) RthJS
240
K/W
Unit max. V
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0
1For calculation of R thJA please refer to Application Note Thermal Resistance
typ.
V(BR)CEO 32 45 V(BR)CBO 32 45 V(BR)EBO 5 -
BCW60/60FF BCX70
BCW60/60FF BCX70
2
Jan-29-2002
BCW60, BCX70
Electrical Characteristics at TA = 25°C, unless otherwise ... |
Document |
BCW60 Data Sheet
PDF 228.34KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BCW60 |
NXP |
NPN general purpose transistors | |
2 | BCW60 |
Siemens Semiconductor Group |
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | |
3 | BCW60 |
Vishay |
Small Signal Transistors | |
4 | BCW60 |
SEMTECH |
NPN Silicon Epitaxial Planar Transistors | |
5 | BCW60 |
Zetex Semiconductors |
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS |