| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
200V and 600V three-phase gate driver Infineon thin-film-SOI-technology Maximum blocking voltage +600 V Output source/sink current +0.165 A/-0.375 A Integrated ultra-fast, low RDS(ON) Bootstrap Diode Insensitivity of the bridge output to negative transient voltages up to -50 V |
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Infineon |
160V pre-regulated three phase SOI gate driver • Bootstrap voltage (VB node) of +160 V • Floating channel designed for bootstrap operation • Integrated power management unit (PMU) with; o Linear pre-regulator to enable wide input VIN range o Integrated charge pump for stable VCC • Integrated curr |
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Infineon |
200V and 600V three-phase gate driver Infineon thin-film-SOI-technology Maximum blocking voltage +600 V Output source/sink current +0.165 A/-0.375 A Integrated ultra-fast, low RDS(ON) Bootstrap Diode Insensitivity of the bridge output to negative transient voltages up to -50 V |
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Infineon |
200V and 600V three-phase gate driver Infineon thin-film-SOI-technology Maximum blocking voltage +600 V Output source/sink current +0.165 A/-0.375 A Integrated ultra-fast, low RDS(ON) Bootstrap Diode Insensitivity of the bridge output to negative transient voltages up to -50 V |
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Infineon |
High voltage gate driver chnologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies compon |
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Infineon |
High voltage gate driver chnologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies compon |
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Infineon |
High voltage gate driver chnologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies compon |
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Infineon |
200V 3-phase gate driver • Infineon thin-film-SOI-technology • Maximum blocking voltage +600 V • Output source/sink current +0.165 A/-0.375 A • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology • Separate control circuits fo |
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Infineon |
200V 3-phase gate driver • Infineon thin-film-SOI-technology • Maximum blocking voltage +600 V • Output source/sink current +0.165 A/-0.375 A • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOItechnology • Separate control circuits fo |
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Infineon |
200V and 600V three-phase gate driver Infineon thin-film-SOI-technology Maximum blocking voltage +600 V Output source/sink current +0.165 A/-0.375 A Integrated ultra-fast, low RDS(ON) Bootstrap Diode Insensitivity of the bridge output to negative transient voltages up to -50 V |
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Infineon |
High voltage gate driver chnologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies compon |
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Infineon |
1200V Three Phase Gate Driver • Infineon Thin-Film-SOI technology • Fully operational to +1200 V • Integrated Ultra‐fast Bootstrap Diode • Floating channel designed for bootstrap operation • Output source/sink current capability +0.35 A/‐0.65 A • Tolerant to negative transient v |
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