Inchange Semiconductor TIP fiche technique

No.	Partie #	Fabricant	Description
1	TIP42C	Inchange Semiconductor	Silicon PNP Power Transistor o Ambient 62.5 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor TIP42C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V
2	TIP35E	Inchange Semiconductor	Silicon NPN Power Transistor mark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1
3	TIP35F	Inchange Semiconductor	Silicon NPN Power Transistor mark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1
4	TIP140F	Inchange Semiconductor	Silicon NPN Power Transistor CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltage
5	TIP3055T	Inchange Semiconductor	Silicon NPN Power Transistor is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Sat
6	TIP36CF	Inchange Semiconductor	Silicon PNP Power Transistor registered trademark isc Silicon PNP Power Transistor TIP36CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emitte
7	TIP131	Inchange Semiconductor	Silicon NPN Darlington Power Transistor Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified
8	TIP53	Inchange Semiconductor Company	Silicon NPN Power Transistors TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 10V
9	TIP2955T	Inchange Semiconductor	Silicon PNP Power Transistor iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat)-1 Collector-Emi
10	TIP140T	Inchange Semiconductor	Silicon NPN Power Transistor ton Power Transistor TIP140T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturat
11	TIP130	Inchange Semiconductor	Silicon NPN Darlington Power Transistor Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified
12	TIP30D	Inchange Semiconductor	Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V ICES C
13	TIP42D	Inchange Semiconductor	Silicon PNP Power Transistor
14	TIP513	Inchange Semiconductor	Silicon PNP Power Transistor ademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=
15	TIP147T	Inchange Semiconductor	Silicon PNP Darlington Power Transistor red trademark isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor TIP147T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0
16	TIP142F	Inchange Semiconductor	Silicon NPN Power Transistor CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltag
17	TIP562	Inchange Semiconductor	isc Silicon NPN Power Transistors registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage TIP562 TIP563 IC=10mA ; IB=0 VCE(sat)-1 Collector
18	TIP563	Inchange Semiconductor	isc Silicon NPN Power Transistors registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage TIP562 TIP563 IC=10mA ; IB=0 VCE(sat)-1 Collector
19	TIP141F	Inchange Semiconductor	Silicon NPN Power Transistor NDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltage I
20	TIP122FP	Inchange Semiconductor	Silicon NPN Power Transistor on to Case 4.3 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W TIP122FP isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw