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TIP122FP |
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| Part Number | TIP122FP |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ I... |
| Features |
on to Case
4.3 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
TIP122FP
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 5A ,IB= 20mA
VBE(on)
Base-Emitter On Voltage
IC= 3.0A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 100V, IE= 0
ICEO... |
| Document |
 TIP122FP Data Sheet
PDF 217.75KB |
| Distributor | Stock | Price | Buy |
|---|
