| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR oltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -150V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -5A ; VCE= -4V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Produ |
|
|
|
|
Inchange Semiconductor |
Power Transistor ning Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.25A ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; |
|
|
|
|
Inchange Semiconductor |
Power Transistor iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1879 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.1A; |
|
|
|
|
Inchange Semiconductor |
Power Transistor iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1878 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.05A; |
|
|
|
|
Inchange Semiconductor |
Power Transistor r-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-7A;IB=-0.7A |
|
|
|
|
Inchange Semiconductor |
Power Transistor or-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5A;IB=-0.5 |
|
|
|
|
Inchange Semiconductor |
2SA1805 lector-emitter saturation voltage IC=-7A;IB=-0.7A VBE Base-emitter voltage IC=-5A ; VCE=-5V ICBO Collector cut-off current VCB=-140V; IE=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-5V hFE-2 DC current g |
|
|
|
|
Inchange Semiconductor |
Power Transistor & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -0.1A |
|
|
|
|
Inchange Semiconductor |
Power Transistor ge IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A; VCE= -2V ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -2V hFE-2 DC Current Gain IC= -2. |
|
|
|
|
Inchange Semiconductor |
Power Transistor oltage IC= -0.7A; IB= -70mA ICBO Collector Cutoff Current VCB= -180V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -0.7A; VCE= -10V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth |
|
|
|
|
Inchange Semiconductor |
Power Transistor tage IC= -0.7A; IB= -70mA ICBO Collector Cutoff Current VCB= -150V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -0.7A; VCE= -10V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth P |
|
|
|
|
Inchange Semiconductor |
Power Transistor ctor-emitter breakdown voltage IC=-50mA; IB=0 -120 V VCE(sat) VBE Collector-emitter saturation voltage IC=-6A;IB=-0.6 A IC=-4A ; VCE=-5V -2.0 V Base-emitter voltage -1.5 V μA μA ICBO Collector cut-off current VCB=-120V; IE=0 -5 IEBO |
|
|
|
|
Inchange Semiconductor |
POWER TRANSISTOR ETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA ; VCE= -5V ICBO Collector Cutoff Current VCB= -230V |
|