2SA1869 |
Part Number | 2SA1869 |
Manufacturer | Inchange Semiconductor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
Features |
ge IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -0.5A; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -2.5A; VCE= -2V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -2V
MIN TYP. MAX UNIT
-50
V
-0.6 V
-1.0 V
-1.0 μA
-1.0 μA
70
240
30
35
pF
100
MHz
hFE-1 Classifications O Y 70-140 120-240 NOTICE: ISC reserves the rights to make changes of the content herein the data... |
Document |
2SA1869 Data Sheet
PDF 214.97KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA1860 |
Sanken electric |
Silicon PNP Transistor | |
2 | 2SA1860 |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | 2SA1860 |
Inchange Semiconductor |
POWER TRANSISTOR | |
4 | 2SA1862 |
Rohm |
High-voltage Switching Transistor | |
5 | 2SA1862 |
Rohm |
(2SA1807 / 2SA1862) High-Voltage Switching Transistor |