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Inchange Semiconductor |
N-Channel MOSFET DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA VSD Diode Forward On-Voltage IS=80A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=40A VGS= ±20V;V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 180A@ TC=25℃ ·Drain Source Voltage : VDSS= 70V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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