| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
IXYS Corporation |
HiPerRF Power MOSFETs l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l |
|
|
|
|
IXYS |
Phase Control Thyristor |
|
|
|
|
IXYS |
Bipolar MOS Transistor |
|
|
|
|
IXYS Corporation |
Polar MOSFETs z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 |
|
|
|
|
IXYS |
Insulated Gate Bi-Polar Transistor |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 4 3 1 Backside: anode/cathode Applications: ● Line rectifying 50/60 Hz ● Softstart AC |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 2 3 1 Backside: Terminal 2 Applications: ● Line rectifying 50/60 Hz ● Softstart AC mo |
|
|
|
|
IXYS Corporation |
HiPerRF Power MOSFETs F-Class: MegaHertz Switching l RF capable MOSFETs l Double metal process for low gate resistance l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast int |
|
|
|
|
IXYS |
Power MOSFET l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99280E(10/05) S |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 2 3 1 Applications: ● Line rectifying 50/60 Hz ● Softstart AC motor control ● DC Motor |
|
|
|
|
IXYS |
Power MOSFETs • International standard package • Low R HDMOSTM process DS (on) • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC |
|
|
|
|
IXYS |
Insulated Gate Bi-Polar Transistor |
|
|
|
|
IXYS |
XPT IGBT / Advantages: ● XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits ● Sonic™ diode - fast reverse recovery - low operating forw |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 4 3 1 Backside: anode/cathode Applications: ● Line rectifying 50/60 Hz ● Softstart AC |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 4 3 1 Backside: anode/cathode Applications: ● Line rectifying 50/60 Hz ● Softstart AC |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 2 3 1 Backside: isolated Applications: ● Line rectifying 50/60 Hz ● Softstart AC moto |
|
|
|
|
IXYS |
High Efficiency Thyristor / Advantages: ● Triac for line frequency ● Three Quadrants Operation - QI - QIII ● Planar passivated chip ● Long-term stability of blocking currents and voltages 2 3 1 Backside: Terminal 2 Applications: ● Line rectifying 50/60 Hz ● Softstart AC mo |
|