No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS |
Phase Control Thyristor |
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IXYS |
Phase Control Thyristor |
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IXYS |
Power MOSFET • International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Guaranteed FBSOA • Low package inductance • Fast intrinsic Rectifier Advantages • |
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IXYS |
Phase Control Thyristor |
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IXYS |
Phase Control Thyristor |
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IXYS |
Power MOSFET z International standard package z miniBLOC with Aluminium nitride isolation z Low RDS(on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped inductive switching (UIS) rated z Low package inductance z Fast intrinsic Rectifier Advant |
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IXYS |
Phase Control Thyristor |
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IXYS |
Phase Control Thyristor |
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IXYS |
Power MOSFET z Trench gate construction for low R DS(on) z International standard package z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS |
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