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IXFN280N085 |
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| Part Number | IXFN280N085 |
| Manufacturer | IXYS |
| Description | HiPerFETTM Power MOSFETs Single Die MOSFET IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt Pd TJ TJM Tstg VISOL ... |
| Features |
• International standard package • miniBLOC, with Aluminium nitride isolation • Low RDS(on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche rated • Guaranteed FBSOA • Low package inductance • Fast intrinsic Rectifier Advantages • Easy to mount • Space savings • High power density Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls © 2008 IXYS Corporation, All rights reserved DS98747B(12/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = 10V, ID ... |
| Document |
 IXFN280N085 Data Sheet
PDF 131.39KB |
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