| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS |
XPT IGBT / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged Trench XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 2x Ic |
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IXYS |
Power MOSFET Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fas |
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