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IXYS Corporation |
PolarHV HiPerFET Power MOSFET D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. T |
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IXYS Corporation |
HiPerFET Power MOSFETs l l l l International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specifie |
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IXYS Corporation |
HiPerFET Power MOSFET · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching ( |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Con |
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IXYS Corporation |
Power MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS( |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Con |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC |
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IXYS Corporation |
Power MOSFET •Double metal process for low gate resistance •miniBLOC, with Aluminium nitride isolation •Unclamped Inductive Switching (UIS) rated •Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or |
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IXYS Corporation |
Power MOSFET International Standard Packages 175°C Operating Temperature High Current Handling Capability Fast Intrinsic Rectifier Dynamic dV/dt Rated Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications DC-DC Co |
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IXYS Corporation |
Power MOSFET z Fast Intrinsic Diode z Dynamic dv/dt Rating z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converte |
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IXYS Corporation |
HiPerFET Power MOSFETs Q-CLASS • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load switching (UIS) rated • Molding epoxies meet UL 94 V-0 flamma |
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IXYS Corporation |
HiPerRF Power MOSFETs l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l |
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IXYS Corporation |
HiPerFET Power MOSFETs l l l l 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Test Conditions 300 1.13/10 6 4 IXYS advanced low Qg process International standard packages Low RDS (on) Symbol Characteristic Values (TJ = 25°C, unless otherwise specif |
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IXYS Corporation |
Power MOSFETs ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications D |
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IXYS Corporation |
Power MOSFETs |
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IXYS Corporation |
N-Channel MOSFET • International standard package • miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped In |
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IXYS Corporation |
Power MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol VDSS VGS( |
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IXYS Corporation |
Power MOSFET • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching ( |
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IXYS Corporation |
Single MOSFET Die Avalanche Rated W °C °C °C °C V~ g l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate ce |
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IXYS Corporation |
(IXFxxxN60) HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC |
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