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IXFN100N25 |
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| Part Number | IXFN100N25 |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJ... |
| Features |
• International standard package • miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 250 2 V 4 V ±200 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 27 mW • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies VDS... |
| Document |
 IXFN100N25 Data Sheet
PDF 70.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IXFN100N20 |
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| 2 | IXFN100N10S1 |
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| 3 | IXFN100N10S2 |
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| 4 | IXFN100N10S3 |
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| 5 | IXFN100N50P |
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