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IXYS Corporation |
IXDN75N120A |
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IXYS Corporation |
(IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 300 |
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IXYS Corporation |
HiPerFET Power MOSFETs International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Con |
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IXYS Corporation |
N-Channel MOSFET S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast i |
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IXYS Corporation |
High Voltage IGBT |
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IXYS Corporation |
HiPerFET Power MOSFETs International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier q q q q q q Symbol Test Con |
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IXYS Corporation |
N-Channel MOSFET S D = Drain, TAB = Drain D (TAB) z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast i |
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IXYS Corporation |
(IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET • International standard packages • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 300 |
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IXYS Corporation |
CoolMOS Power MOSFET ● RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 5 mA; VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 100 A 0.05 mA mA ● miniBLOC package - |
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IXYS Corporation |
N-Channel MOSFET l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote |
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IXYS Corporation |
High Voltage IGBT q q q q q q q q 50/60 Hz; IISOL £ 1 mA NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled Inte |
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