| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
IXYS Corporation |
PolarHV HiPerFET Power MOSFET D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. T |
|
|
|
|
IXYS |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
|
|
|
|
IXYS Corporation |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
|
|
|
|
IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Con |
|
|
|
|
IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT V V V V A A A A G E G DS TO-247 (IXGH) TO-268 (IXGT) DataShee C (TAB) DataSheet4U.com -55 ... +150 150 -55 ... +150 300 260 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md We |
|
|
|
|
IXYS |
Medium Voltage Thyristor |
|
|
|
|
IXYS |
Medium Voltage Thyristor |
|
|
|
|
IXYS |
Power MOSFET • fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applicatio |
|
|
|
|
IXYS |
Medium Voltage Thyristor |
|
|
|
|
IXYS |
Medium Voltage Thyristor |
|
|
|
|
IXYS Corporation |
IGBT · International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB · High frequency IGBT · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Char |
|
|
|
|
IXYS Corporation |
HiPerFET Power MOSFETs • International standard package • miniBLOC, with Aluminium nitride isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated |
|
|
|
|
IXYS Corporation |
GigaMOS TrenchT2 HiperFET Power MOSFET z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(o |
|
|
|
|
IXYS |
Distributed Gate Thyristor |
|
|
|
|
IXYS Corporation |
HiPerFETTM Power MOSFETs Q-Class Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0 |
|
|
|
|
IXYS |
IGBT z Optimized for Low Switching Losses z Square RBSOA z International Standard Packages z Positive Thermal Coefficient of Vce(sat) z Avalanche Rated z High Current Handling Capability Advantages z High Power Density z Low Gate Drive Requirement Applica |
|
|
|
|
IXYS |
Power MOSFET International Standard Packages High Voltage Package Low RDS(ON) and QG Avalanche Rated Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Applications Switch-Mode and Resonant-Mode Power Supplies DC- |
|
|
|
|
IXYS |
IGBT Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Anti-Parallel Fast Diode Short Circuit Capability International Standard Packages Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications |
|
|
|
|
IXYS Corporation |
Trench Power MOSFET ISOPLUS220 l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF |
|
|
|
|
IXYS Corporation |
IGBT V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. |
|