| No. | Partie # | Fabricant | Description | Fiche Technique |
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IXYS |
IGBT • Very high frequency IGBT • New generation HDMOSTM process • Internationalstandardpackage JEDEC TO-247 • High peak current handling capability Symbol BVCES VGE(th |
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IXYS |
Single Phase Rectifier Bridge • Package with DCB ceramic base plate in low profile • Isolation voltage 3000 V~ • Planar passivated chips • Low forward voltage drop • Leads suitable for PC board soldering Applications |
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IXYS |
Single Phase Rectifier Bridge |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS |
Power MOSFET International Standard Package Plastic Overmolded Tab High Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance Advantages High Power Density Easy to Mount Space Savings Application |
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IXYS |
Power MOSFET z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - M |
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IXYS Corporation |
HiPerRF Power MOSFETs l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l |
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IXYS Corporation |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS Corporation |
(VUB120 / VUB160) Three Phase Rectifier Bridge Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast diode Convenient package outline UL registered E 72873 Case and potting UL94 V-0 Thermistor q q q q q q q Applications q Drive Inverters with brake system IC25 IC75 ICM Pto |
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IXYS |
Three Phase Rectifier Bridge • Low forward voltage drop • Planar passivated chips • Epoxy meets UL 94V-0 Applications • Supplies for DC power equipment • Input rectifiers for PWM inverter • Battery DC power supplies • Field supply for DC motors Advantages • Easy to mount with on |
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IXYS Corporation |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For three phase bridge configuratio |
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IXYS |
Standard Rectifier Module / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● In |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS |
Standard Rectifier Module / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● In |
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IXYS |
Standard Rectifier Module / Advantages: ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour Applications: ● Diode for main rectification ● For one phase bridge configurations ● Supplies for DC power equipment ● In |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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IXYS |
Standard Rectifier Module / Advantages: ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current Applications: ● Diode for main rectification ● For one phase bridge configurations |
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