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IXTU12N06T |
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| Part Number | IXTU12N06T |
| Manufacturer | IXYS |
| Description | Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU12N06T IXTY12N06T VDSS = ID25 = RDS(on) ≤ 60V 12A 85mΩ TO-251 (IXTU) Symbol VDSS VDGR VGS... |
| Features |
z Ultra-low On Resistance z Unclamped Inductive Switching (UIS)
rated z Low package inductance
- easy to drive and to protect z 175 °C Operating Temperature
Advantages
z Easy to mount z Space savings z High power density
Applications
z Automotive - Motor Drives - 42V Power Bus - ABS Systems
z DC/DC Converters and Off-line UPS z Primary Switch for 24V and 48V
Systems z High Current Switching
Applications
2008 IXYS CORPORATION All rights reserved
DS99947(4/08)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Notes 1 Ciss Coss Crss VGS = 0V, ... |
| Document |
 IXTU12N06T Data Sheet
PDF 164.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTU12N06T |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IXTU1N80P |
IXYS |
Power MOSFET |
|
| 3 | IXTU1R4N60P |
IXYS |
Power MOSFET |
|
| 4 | IXTU1R4N60P |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXTU01N100 |
IXYS Corporation |
Power MOSFET |
|