| No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
HEXFET Power MOSFET g. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating |
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International Rectifier |
Power MOSFET he Fullpak is mounted to a heat sink using a single clip or by a single screw fixing. G Gate S D G TO-220 Full-Pak D Drain S Source Base Part Number IRLI3705NPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Pa |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤ 1mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide var |
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INCHANGE |
N-Channel MOSFET ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS |
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Infineon |
Power MOSFET he Fullpak is mounted to a heat sink using a single clip or by a single screw fixing. G Gate S D G TO-220 Full-Pak D Drain S Source Base Part Number IRLI3705NPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Pa |
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