IRLI3705N |
Part Number | IRLI3705N |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
g.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθJA
Parameter Junction-to-Case Junction-to-Ambient
G
PD - 9.... |
Document |
IRLI3705N Data Sheet
PDF 112.71KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRLI3705 |
INCHANGE |
N-Channel MOSFET | |
2 | IRLI3705N |
INCHANGE |
N-Channel MOSFET | |
3 | IRLI3705NPBF |
International Rectifier |
Power MOSFET | |
4 | IRLI3705NPBF |
Infineon |
Power MOSFET | |
5 | IRLI3103 |
International Rectifier |
POWER MOSFET |