| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
IRF |
IRG4PC40W www.DataSheet4U.com C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IG |
|
|
|
|
IRF |
IRG4PH40KD • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR 7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/09 www.irf.com 7 |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM u |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC packag |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C UltraFast CoPack IGBT VCES = 500V VCE(sat) ≤ 3.0V G @VGE = 15V, |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC packag |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT |
|
|
|
|
IRF |
Insulated Gate Bipolar Transistor UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDT |
|
|
|
|
IRF |
SMPS IGBT • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability Benefits • Parallel O |
|
|
|
|
IRF |
WARP2 SERIES IGBT • NPT Technology, Positive Temperature Coefficient • Lower VCE(SAT) • Lower Parasitic Capacitances • Minimal Tail Current • HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode • Tighter Distribution of Parameters • Higher Reliability Benefits • Parallel O |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • • • • • • • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalen |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.0V @VGE = 15V, IC = 13A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) fr |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) ≤ 3.4V @VGE = 15V, I C = 18A n-ch |
|
|
|
|
IRF |
IRGP20B60PD • • • • • • • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalen |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDT |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • |
|
|
|
|
IRF |
INSULATED GATE BIPOLAR TRANSISTOR • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fa |
|