| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
MOSFET •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforindustrialgradeapplicationsaccord |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P |
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