IPW60R125P6 INCHANGE N-Channel MOSFET Datasheet, en stock, prix

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IPW60R125P6

INCHANGE
IPW60R125P6
IPW60R125P6 IPW60R125P6
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Part Number IPW60R125P6
Manufacturer INCHANGE
Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R125P6 IIPW60R125P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤125mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-...
Features
·Static drain-source on-resistance: RDS(on)≤125mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·DESCRITION
·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 87 PD Total Dissipation @TC=25℃ 219 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Chann...

Document Datasheet IPW60R125P6 Data Sheet
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