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N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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Inchange Semiconductor |
2ch AF Power Amplifier ©q Package Dimensions Pin compatible with the STK4102¢òand unit:mm STK4101V series (high-grade type) over the output range 6 to 50W for easy interchangability ©q Built-in muting circuit to cut off spurious shock noise ©q 125¡æ guaranteed high tempe |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 9.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 2.0Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.5Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤3.5Ω. ·Enhancement mode: Vth = 2.5 to4.0V (VDS = 10 V, ID=0.4mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regu |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) =10.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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INCHANGE |
N-Channel MOSFET ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 160mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swit |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 0.065Ω (typ.) ·Easy to control Gate switching ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) ·100% avalanche tested ·Minimum Lot-to-Lot vari |
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INCHANGE |
N-Channel MOSFET ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE M |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤4.3mΩ. (VGS = 10 V) ·Enhancement mode: Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchin |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.4Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 1.7Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Volt |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 3.3mΩ (typ.) (VGS = 10 V) ·Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION · |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) =10.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(on) ≤8.2mΩ. (VGS = 10 V) ·Enhancement mode: Vth =2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchin |
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INCHANGE |
N-Channel MOSFET ·Low drain-source on-resistance: RDS(ON) = 8.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switchi |
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