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Inchange Semiconductor |
Thyristors t VAA=6V; RL=100Ω 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current NOTICE： VAA=6V; RGK=1k Ω , IT= 10mA 5 mA ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati |
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Inchange Semiconductor |
Thyristors A VTM On-state voltage ITM= 8A 1.7 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA Notice： ISC reserves the rights to make changes of th |
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Inchange Semiconductor |
Thyristors M= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is registered trademark isc Thyristor |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM |
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INCHANGE |
Thyristor ent INCHANGE Semiconductor TIC106series MIN TYP MAX UNIT 3.5 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current VRM |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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Inchange Semiconductor |
Thyristors M=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=1kΩ 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current VAA=6V; RGK=1kΩ, IT= 10mA 5 mA isc website：ww |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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INCHANGE |
Triac ,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 2.5 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER IRRM Repetitive peak reverse current IDRM Repetitive peak off-state cur |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMET |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM |
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Inchange Semiconductor |
Thyristors M=VDRM, Tj=110℃ 0.4 1.0 mA 0.4 1.0 mA VTM On-state voltage ITM= 5A 1.7 V IGT Gate-trigger current VAA=6V; RL=1kΩ 200 μA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.0 V IH Holding current VAA=6V; RGK=1kΩ, IT= 10mA 5 mA isc website：ww |
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INCHANGE |
Thyristor ate current VD=VDRM Rated;Tc=110℃;RGK=1KΩ 1 mA VTM On-state voltage ITM= 5A; 1.7 V IGT Gate-trigger current VGT Gate-trigger voltage VAA = 6V;RL=100Ω;tP≥20μs 0.2 mA VAA = 6V;RL=100Ω; tP≥20μs;RGK=1KΩ Tc=-40℃ Tc=25℃ Tc=110℃ 0.4 0.2 1.2 1 |
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Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
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Inchange Semiconductor |
Thyristors ℃ 2.0 mA VTM On-state voltage ITM= 12A 1.4 V IGT Gate-trigger current VAA=6V; RL=100Ω 20 mA VGT Gate-trigger voltage VAA=6V; RL=100Ω 1.5 V IH Holding current VAA=6V; RGK=1kΩ,IT=100mA 40 mA isc website：www.iscsemi.cn 1 isc&iscsemi is |
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Inchange Semiconductor |
Thyristors j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC116series MIN TYP MAX UNIT 3 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current |
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INCHANGE |
Thyristor e Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC126series MIN TYP MAX UNIT 2.4 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse |
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INCHANGE |
Thyristor j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor TIC116series MIN TYP MAX UNIT 3 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current |
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