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TIC225M |
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| Part Number | TIC225M |
| Manufacturer | Inchange Semiconductor |
| Description | isc Triacs TIC225M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device perfo... |
| Features |
·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 8 A ITSM Non-repetitive peak on-state current 70 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 2.5 ... |
| Document |
 TIC225M Data Sheet
PDF 161.91KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC225 |
BOURNS |
SILICON TRIACS |
|
| 2 | TIC225 |
Power Innovations Limited |
SILICON TRIACS |
|
| 3 | TIC225 |
INCHANGE |
Triac |
|
| 4 | TIC225A |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 5 | TIC225B |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|