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NPN Transistor red trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; |
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Thyristor ted; Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=60A；tP=380μs Ⅰ VD =12V;RL=33Ω; Ⅱ Ⅲ VD =12V;RL=33Ω; MIN MAX UNIT 0.01 5 mA 1.55 V 50 50 mA 50 1.3 V 0.9 ℃/W isc website：w |
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Thyristor ltage IGT Gate-trigger current VGT Rth (j-mb) Gate-trigger voltage Junction to mounting base IT=5.5A Ⅰ VD =12V;RL=30Ω Ⅱ Ⅲ VD =12V;RL=30Ω Half cycle MIN MAX UNIT 0.005 1 mA 1.6 V 10 10 mA 10 1.3 V 2.6 ℃/W isc website：www.iscsemi.c |
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Triac ·With TO-220F packaging ·Be used in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance.Typical applications include motor control, industrial and domestic lighting,heating and stat |
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NPN Transistor red trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; |
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NPN Transistor o Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified |
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TO-220 N-Channel MOSFET ·Drain Current –ID= 150A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITIO |
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N-Channel MOSFET ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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NPN Transistor red trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; |
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INCHANGE |
NPN Transistor red trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; |
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NPN Transistor o Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified |
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INCHANGE |
NPN Transistor o Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified |
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INCHANGE |
NPN Transistor o Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified |
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INCHANGE |
TO-220C N-Channel MOSFET ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·S |
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Thyristor state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=60A；tP=380μs Ⅰ VD =12V;RL=33Ω; Ⅱ Ⅲ VD =12V;RL=33Ω; MIN MAX UNIT 0.01 5 mA 1.55 V 50 50 mA 50 1.3 V 0.8 ℃/W isc website：www.iscsemi.com isc & |
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N-Channel MOSFET ·Drain Current –ID= 42A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 37mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION |
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N-Channel MOSFET ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15.8mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITIO |
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