BDT41C INCHANGE NPN Transistor Datasheet, en stock, prix

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BDT41C

INCHANGE
BDT41C
BDT41C BDT41C
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Part Number BDT41C
Manufacturer INCHANGE
Description ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/4...
Features o Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41A BDT 41B IC= 30mA; IB= 0 BDT 41C VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 BDT41/A VCE= 30V; IB= 0 ICEO Collector Cutoff Curr...

Document Datasheet BDT41C Data Sheet
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