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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curre |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switchi |
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INCHANGE |
N-Channel MOSFET ·Ultra low effective capacitances ·Low gate charge ·Improved transconductance ·Low gate drive power loss ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤3mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variet |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technolo |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.65Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High peak current capability ·Ultra l |
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INCHANGE |
N-Channel MOSFET ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch |
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INCHANGE |
N-Channel MOSFET ·With TO-262(I2PAK) package ·Low input capacitance and gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Swi |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curr |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.22Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curr |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤280mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technol |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.33Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak curre |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technolo |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curr |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.44Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curr |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curre |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak curre |
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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ultra low gate charge ·High peak curre |
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