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SPI11N65C3 |
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| Part Number | SPI11N65C3 |
| Manufacturer | INCHANGE |
| Description | ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Con... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ... |
| Document |
 SPI11N65C3 Data Sheet
PDF 282.62KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | SPI11N65C3 |
Infineon Technologies |
Power Transistor |
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| 2 | SPI11N60C3 |
Infineon Technologies |
Power Transistor |
|
| 3 | SPI11N60C3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | SPI11N60CFD |
INCHANGE |
N-Channel MOSFET |
|
| 5 | SPI11N60CFD |
Infineon Technologies |
Power-Transistor |
|