| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
N-Channel MOSFET ·With TO-220F packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·AB |
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INCHANGE |
N-Channel MOSFET ·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.) ·Low drain-source On resistance: RDS(on)=1.4Ω (Max.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance |
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