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INCHANGE |
N-Channel MOSFET ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25 |
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INCHANGE |
N-Channel MOSFET ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS IIPA65R150CFD MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 650 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.9mA 3.5 4.5 V RDS(ON)* Drain-So |
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