IIPW60R045CP |
Part Number | IIPW60R045CP |
Manufacturer | INCHANGE |
Description | INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lo... |
Features |
·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 230 PD Total Dissipation @TC=25℃ 431 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER ... |
Document |
IIPW60R045CP Data Sheet
PDF 220.02KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IIPA65R150CFD |
INCHANGE |
N-Channel MOSFET | |
2 | II1608 |
RFE international |
SURFACE MOUNT INDUCTORS | |
3 | IID1 |
AMI |
CMOS Gate Array | |
4 | IID2 |
AMI |
CMOS Gate Array | |
5 | IID3 |
AMI |
CMOS Gate Array |