| No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon PNP Power Transistor - Emitter voltage Ic= –0.5A ;Vce= –2V ICBO Collector Cutoff Current VCB= -120V ; IE=0 ICEO Collector Cutoff Current VCE= -60V ; IB=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain fT Transition frequency Switching time |
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Inchange Semiconductor |
Silicon NPN Power Transistor wer Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 |
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Inchange Semiconductor |
Silicon PNP Power Transistor CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage ICBO Collector C |
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Inchange Semiconductor |
Silicon NPN Power Transistor sistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collecto |
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INCHANGE |
NPN Transistor =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-EmitterSaturation Voltage IC= 0.2A ;IB= 0.02A |
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