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DS15 |
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| Part Number | DS15 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Fast Switching Speeds ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for gener... |
| Features |
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-EmitterSaturation Voltage
IC= 0.2A ;IB= 0.02A
VBE(sat) Base-Emitter Saturation Voltage
IC=0.2A ;IB= 0.02 A
ICBO
Collector Cutoff Current
VCB=50 , IE= 0
ICEO
Emitter Cutoff Current
VCE= 50V; IC= 0
hFE-1
DC Current Gain
IC=0.1A ; VCE=10V
DS15
MIN TYP MAX UNIT
100
V
200
V
1
V
1.5
V
0.1 mA
0.5 mA
35
320
NOTICE： ISC reserves the rights to make changes of the content herei... |
| Document |
 DS15 Data Sheet
PDF 219.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DS1 |
IXYS Corporation |
Rectifier Diode Avalanche Diode |
|
| 2 | DS1-12D |
IXYS Corporation |
Rectifier Diode Avalanche Diode |
|
| 3 | DS1000 |
Dallas Semiconducotr |
5-Tap Silicon Delay Line |
|
| 4 | DS1003 |
Dallas Semiconductor |
4-Tap Silicon Delay Line |
|
| 5 | DS1004 |
Dallas Semiconducotr |
5-Tap High Speed Silicon Delay Line |
|