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Inchange |
Silicon Power Transistor ACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC |
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Inchange Semiconductor |
Silicon NPN Power Transistors otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 50mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC=0 VCE(sat) Collector-Emitter S |
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INCHANGE |
NPN Transistor O Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A ;IB= 1.6A ICEO Coll |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange |
Silicon Power Transistor METER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; |
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INCHANGE |
NPN Transistor ：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD200D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sust |
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INCHANGE |
NPN Transistor PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB |
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INCHANGE |
NPN Transistor PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB |
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INCHANGE |
Diode Rectifier ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are ideally suited for power converters, motors |
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INCHANGE |
Diode Rectifier ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are ideally suited for power converters, motors |
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Inchange Semiconductor |
Silicon NPN Power Transistor O Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICEO Collector Cutoff Current VCE= 50V; IB= 0 IEBO Emitter Cutoff Current |
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