| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
INCHANGE |
NPN Transistor 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 2A 2.0 V hFE※ DC Current Gain IC= 10A; VCE= 5V |
|
|
|
|
INCHANGE |
NPN Transistor IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC=10mA ; IB= 1mA ICBO Collector Cutoff Current VCB= 240V; IE= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V MIN TYP. MAX UNIT 1.0 V 1.0 |
|
|
|
|
INCHANGE |
2SC2484 CE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB=B 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 2.0 V 1.8 V 50 μA 50 μA hFE-1 DC Current |
|
|
|
|
Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors own Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.4A VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.4A ICBO Collector Cutoff Current VCB= 45 |
|
|
|
|
INCHANGE |
2SC2489 er Sustaining Voltage IC= 0.1A ; IE= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 70V; IE= 0 1 mA IEBO Em |
|
|
|
|
Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
|
|
|
|
Inchange Semiconductor |
Triacs ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARA |
|
|
|
|
Inchange Semiconductor |
Power Transistor specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 5mA; VCE= 5V ICBO Collector Cutoff Curren |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistors C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 150 V V(BR)EBO Emitter-Base Break |
|
|
|
|
Inchange Semiconductor |
Silicon NPN RF Transistor EB= 2V; IC= 0 0.5 μA hFE DC Current Gain IC= 50mA ; VCE= 10V 30 200 fT Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.5 GHz COB Output Capacitance ︱S21e︱2 Insertion Power Gain NF Noise Figure IE= 0 ; VCB= 10V; f= 1.0MHz 1.25 2. |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor = 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 5V |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor aturation Voltage IC= 3A; IB= 0.6A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC |
|
|
|
|
Inchange Semiconductor |
Silicon NPN Power Transistor ation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 hFE-2 fT DC Current Gain IC= 0.1A ; VCE= 5V DC Current Gain IC= 5A ; VCE= 5V Current-Gain—Bandwidth Product IC= 0 |
|
|
|
|
INCHANGE |
Silicon NPN Power Transistor VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 5V ICBO Collector Cutoff Current VCB= 70V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= |
|
|
|
|
INCHANGE |
NPN Transistor = 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V ICBO Collector Cutoff Current VCB=150V;IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V 2SC2461 MIN M |
|
|
|
|
INCHANGE |
Triac ion to Ambient TYP MAX UNIT 1.9 ℃/W 62.5 ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS IRRM IDRM Repetitive peak reverse current Repetitive peak off-state current Ⅰ VRM=VRRM, VRM=VRRM, Tj=110℃ VD |
|
|
|
|
INCHANGE |
NPN Transistor mitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 0.2A; VCE= 5V hFE-2 DC Current |
|
|
|
|
INCHANGE |
NPN Transistor tter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= -0.5A ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT C |
|
|
|
|
INCHANGE |
NPN Transistor ge IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 5V ICBO Collector Cutoff Current VCB=120V;IB= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE DC Current Gain IC= 1A ; VCE= 10V MIN MAX UNIT 2.0 V 1.5 V 100 uA 100 |
|