| No. | Partie # | Fabricant | Description | Fiche Technique |
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INCHANGE |
NPN Transistor tered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BF469/BF471 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 5mA IEBO |
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INCHANGE |
NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Collector-Ba |
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INCHANGE |
NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Collector-Ba |
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INCHANGE |
PNP Transistor is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BF470/BF472 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -30mA; IB= |
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INCHANGE |
NPN Transistor tered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor BF469/BF471 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 5mA IEBO |
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INCHANGE |
PNP Transistor is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BF470/BF472 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -30mA; IB= |
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INCHANGE |
NPN Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF457/458/459 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage V(BR)EBO Collector-Ba |
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