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BF459 |
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| Part Number | BF459 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO(BR) = 160V(Min)- BF457 250V(Min)- BF458 300V(Min)- BF459 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... |
| Features |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BF457/458/459
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)EBO
Collector-Base Breakdown Voltage
BF457 BF458 BF459
BF457
ICBO
Collector Cutoff Current BF458
BF459
VCE(sat) Collector-Emitter Saturation Voltage
hFE
DC Current Gain
Cre
Reverse Capacitance
COB
Output Capacitance
fT
Current-Gain—Bandwidth Product
CONDITIONS
IC= 10mA ;IB= 0
IC= 0 ;IE= 100uA VCB= 160V VCB= 200V VCB= 250V IC= 50mA; IB= 10mA IC= 30mA ... |
| Document |
 BF459 Data Sheet
PDF 203.88KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF450 |
NXP |
PNP medium frequency transistor |
|
| 2 | BF450 |
NXP |
(BF450 / BF451) HF Silicon Planar Epitaxial Transistor |
|
| 3 | BF450 |
Siemens Semiconductors |
(BF450 / BF451) PNP Silicon RF Transistors |
|
| 4 | BF451 |
NXP |
(BF450 / BF451) HF Silicon Planar Epitaxial Transistor |
|
| 5 | BF451 |
Siemens Semiconductors |
(BF450 / BF451) PNP Silicon RF Transistors |
|